Samsung M393B2G70BH0-CK0 16GB vs Micron Technology AFLD416EH1P 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

更快的写入速度，GB/s

8.1 6.9

测试中的平均数值

Micron Technology AFLD416EH1P 16GB

需要考虑的原因
Micron Technology AFLD416EH1P 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 -93% 更低的延时
更快的读取速度，GB/s

13.7 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Micron Technology AFLD416EH1P 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 28
读取速度，GB/s

9.2 13.7
写入速度，GB/s

8.1 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 2312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

Crucial Technology BLS16G4D26BFSB.16FBR 16GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

G Skill Intl F4-4000C18-32GVK 32GB

G Skill Intl F4-4000C18-32GVK 32GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

Crucial Technology CT16G4SFD824A.C16FN 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMW16GX4M2C3200C16 8GB

Corsair CMW16GX4M2C3200C16 8GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Apacer Technology 78.CAGMR.40C0B 8GB

Apacer Technology 78.CAGMR.40C0B 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Mushkin 99[2/7/4]200F 8GB

Mushkin 99[2/7/4]200F 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston KHX2400C15S4/8G 8GB

Kingston KHX2400C15S4/8G 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingston 9905663-030.A00G 16GB

Kingston 9905663-030.A00G 16GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Kingston 9905663-008.A00G 16GB

Kingston 9905663-008.A00G 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9905622-055.A00G 4GB

Kingston 9905622-055.A00G 4GB