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Samsung M393B2G70BH0-CK0 16GB
Mushkin MR[A/B]4U300JJJM16G 16GB

Samsung M393B2G70BH0-CK0 16GB vs Mushkin MR[A/B]4U300JJJM16G 16GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Mushkin MR[A/B]4U300JJJM16G 16GB 需要考虑的原因
Mushkin MR[A/B]4U300JJJM16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 54
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Mushkin MR[A/B]4U300JJJM16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 27
  • 读取速度，GB/s
    9.2 left arrow 17.3
  • 写入速度，GB/s
    8.1 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3528

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Mushkin MR[A/B]4U300JJJM16G 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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G Skill Intl F4-3200C16-4GTZ 4GB
内存RAM
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Ramaxel Technology RMR5030ME68F9F1600 4GB
Samsung V-GeN D4S8GL30A8TX5 8GB
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内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Micron Technology 36ASF4G72PZ-2G3D1 32GB
内存RAM
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Kingston 99U5403-465.A00LF 8GB
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内存RAM