Samsung M393B2G70BH0-CK0 16GB vs Panram International Corporation W4U2133PS-8G 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Panram International Corporation W4U2133PS-8G 8GB

Panram International Corporation W4U2133PS-8G 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Panram International Corporation W4U2133PS-8G 8GB

需要考虑的原因
Panram International Corporation W4U2133PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 54

左右 -125% 更低的延时
更快的读取速度，GB/s

15.6 9.2

测试中的平均数值
更快的写入速度，GB/s

11.3 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Panram International Corporation W4U2133PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 24
读取速度，GB/s

9.2 15.6
写入速度，GB/s

8.1 11.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 2767

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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EXCELERAM D4168G8HHSS9CJRB21 16GB

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

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Kingston KVR533D2N4 512MB

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Apacer Technology 78.01GA0.9K5 1GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Samsung M471B5673FH0-CF8 2GB

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Crucial Technology BL16G32C16U4RL.M8FB1 16GB

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Kingston KHX3200C18D4/8G 8GB

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Avant Technology W642GU42J7240N8 16GB

Avant Technology W642GU42J7240N8 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMT32GX4M2E3200C16 16GB

Corsair CMT32GX4M2E3200C16 16GB