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Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
比较
Samsung M393B2G70BH0-CK0 16GB vs Patriot Memory (PDP Systems) 3000 C18 Series 16GB
总分
Samsung M393B2G70BH0-CK0 16GB
总分
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
需要考虑的原因
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
54
左右 -50% 更低的延时
更快的读取速度,GB/s
15.5
9.2
测试中的平均数值
更快的写入速度,GB/s
12.8
8.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
54
36
读取速度,GB/s
9.2
15.5
写入速度,GB/s
8.1
12.8
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2105
3050
Samsung M393B2G70BH0-CK0 16GB RAM的比较
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston 99U5429-007.A00LF 2GB
Mushkin 99[2/7/4]192[F/T] 4GB
Kingston 99U5584-007.A00LF 4GB
Kingston LV36D4U1S8HD-8XR 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston CBD24D4S7D8MB-16 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Kingston KHX1600C9D3/8G 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
A-DATA Technology DDR3 1600 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Samsung M393B1G70QH0-YK0 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
Crucial Technology CT51264BF160BJ.M8F 4GB
Kingston HP32D4U2S8MR-8 8GB
Kingston 99U5474-028.A00LF 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905630-018.A00G 8GB
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
报告一个错误
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Bug description
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