Samsung M393B2G70BH0-CK0 16GB vs Samsung M393A1G40DB0-CPB 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

49 54

左右 -10% 更低的延时
更快的读取速度，GB/s

10.9 9.2

测试中的平均数值
更快的写入速度，GB/s

8.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Samsung M393A1G40DB0-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 49
读取速度，GB/s

9.2 10.9
写入速度，GB/s

8.1 8.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 2427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Transcend Information JM3200HLE-16G 16GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

G Skill Intl F4-4000C15-8GTRG 8GB

G Skill Intl F4-4000C15-8GTRG 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMR32GX4M4C3000C15 8GB

Corsair CMR32GX4M4C3000C15 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3200C15-16GTZKO 16GB

G Skill Intl F4-3200C15-16GTZKO 16GB