Samsung M393B2G70BH0-CK0 16GB vs Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

低于PassMark测试中的延时，ns

54 66

左右 18% 更低的延时
更快的写入速度，GB/s

8.1 7.3

测试中的平均数值

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

报告一个错误

更快的读取速度，GB/s

14.7 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 66
读取速度，GB/s

9.2 14.7
写入速度，GB/s

8.1 7.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 1699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X4GF3000C15K4 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Apacer Technology 78.01G86.9H50C 1GB

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Crucial Technology CT8G4DFRA266.C4FE 8GB

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Kingston HP26D4U9D8ME-16X 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Samsung M3 93T5750CZA-CE6 2GB

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Essencore Limited 8GBF1X08QFHH38-135-K 8GB

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G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB