Samsung M393B2G70BH0-YK0 16GB vs G Skill Intl F4-2133C15-4GRR 4GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

G Skill Intl F4-2133C15-4GRR 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRR 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 63

左右 -75% 更低的延时
更快的读取速度，GB/s

14.7 8.1

测试中的平均数值
更快的写入速度，GB/s

10.9 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-2133C15-4GRR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 36
读取速度，GB/s

8.1 14.7
写入速度，GB/s

7.5 10.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1945 2570

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AO2P21FC4R1-BRFS 4GB

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G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston KHX2800C14D4/4GX 4GB

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Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston HP32D4U2S8ME-16 16GB

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Samsung M393B5270CH0-CH9 4GB

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Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

G Skill Intl F3-1866C8-8GTX 8GB

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Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB