Samsung M393B2G70BH0-YK0 16GB vs Kingston XW21KG-HYD-NX 8GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Kingston XW21KG-HYD-NX 8GB

需要考虑的原因
Kingston XW21KG-HYD-NX 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 63

左右 -70% 更低的延时
更快的读取速度，GB/s

18.5 8.1

测试中的平均数值
更快的写入速度，GB/s

12.6 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Kingston XW21KG-HYD-NX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 37
读取速度，GB/s

8.1 18.5
写入速度，GB/s

7.5 12.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1945 3100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

Corsair CMWS8GL3200K16W4E 8GB

Corsair CMWS8GL3200K16W4E 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston 9905702-135.A00G 8GB

Kingston 9905702-135.A00G 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9905622-024.A00G 4GB

Kingston 9905622-024.A00G 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston ACR26D4S9S8KA-8 8GB

Kingston ACR26D4S9S8KA-8 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Chun Well Technology Holding Limited D4U0836181B 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Kingston KHX3200C16D4/32GX 32GB

Kingston KHX3200C16D4/32GX 32GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3333C16-16GTZR 16GB

G Skill Intl F4-3333C16-16GTZR 16GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240