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Samsung M393B4G70EMB-CK0 32GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Samsung M393B4G70EMB-CK0 32GB vs Patriot Memory (PDP Systems) 4400 C18 Series 8GB

总分
star star star star star
Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

总分
star star star star star
Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

差异 规格 评论

差异

Samsung M393B4G70EMB-CK0 32GB 需要考虑的原因
Samsung M393B4G70EMB-CK0 32GB
报告一个错误
Patriot Memory (PDP Systems) 4400 C18 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 66
    左右 -144% 更低的延时
  • 更快的读取速度，GB/s
    19.9 left arrow 7.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.1 left arrow 6.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B4G70EMB-CK0 32GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 27
  • 读取速度，GB/s
    7.3 left arrow 19.9
  • 写入速度，GB/s
    6.6 left arrow 17.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1760 left arrow 3829

Samsung M393B4G70EMB-CK0 32GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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