RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170EH1-CH9 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
比较
Samsung M393B5170EH1-CH9 4GB vs Crucial Technology BLS16G4D26BFSB.16FBD 16GB
总分
Samsung M393B5170EH1-CH9 4GB
总分
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B5170EH1-CH9 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
报告一个错误
低于PassMark测试中的延时,ns
22
51
左右 -132% 更低的延时
更快的读取速度,GB/s
17.9
10.2
测试中的平均数值
更快的写入速度,GB/s
12.6
7.6
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M393B5170EH1-CH9 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
51
22
读取速度,GB/s
10.2
17.9
写入速度,GB/s
7.6
12.6
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2049
3152
Samsung M393B5170EH1-CH9 4GB RAM的比较
Corsair CMT8GX3M2A1866C9 4GB
G Skill Intl F4-2133C15-16GRS 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB RAM的比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B5170EH1-CH9 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Protocol Engines Kingrock 800 2GB 2GB
Mushkin MR[A/B]280HHHH16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CMK64GX4M4B3466C16 16GB
Kingston 9905584-016.A00LF 4GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Kingston 9905428-401.A00LF 8GB
Apacer Technology 78.CAGPP.40C0B 8GB
Kingston 9905403-090.A01LF 4GB
Corsair CMK128GX4M8Z2933C16 16GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Samsung M471B5273CH0-CH9 4GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Samsung M378B5273DH0-CH9 4GB
Hewlett-Packard 48U45AA# 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-2400C17-8GVR 8GB
Kingston K531R8-MIN 4GB
Corsair CMK16GX4M4C3200C15 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C17-16GTZ 16GB
报告一个错误
×
Bug description
Source link