Samsung M393B5170FH0-CH9 4GB vs Crucial Technology BLT4G4D26AFTA.8FADG 4GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

需要考虑的原因
Crucial Technology BLT4G4D26AFTA.8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 49

左右 -113% 更低的延时
更快的读取速度，GB/s

16.5 10

测试中的平均数值
更快的写入速度，GB/s

12.6 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 23
读取速度，GB/s

10.0 16.5
写入速度，GB/s

8.2 12.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2116 2755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Micron Technology 8ATF1G64AZ-2G1A1 8GB

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Samsung M393B5170FH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA82GS6CJR8N-UH 16GB

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Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Avant Technology W6451U66J7240ND 4GB

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Team Group Inc. Vulcan-1600 4GB

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Corsair CMT32GX4M2K4000C19 16GB