Samsung M393B1G70BH0-CK0 8GB vs Mushkin 99[2/7/4]191[F/T] 4GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Mushkin 99[2/7/4]191[F/T] 4GB

需要考虑的原因
Mushkin 99[2/7/4]191[F/T] 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 51

左右 -96% 更低的延时
更快的读取速度，GB/s

14.5 9.8

测试中的平均数值
更快的写入速度，GB/s

10.1 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Mushkin 99[2/7/4]191[F/T] 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 26
读取速度，GB/s

9.8 14.5
写入速度，GB/s

8.1 10.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 2480

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB

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Corsair CMR32GX4M2C3000C15 16GB

Kingston 9965525-018.A00LF 4GB

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Maxsun MSD48G32Q3 8GB

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Kingston 99U5474-023.A00LF 4GB

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G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB