Samsung M393B5170FH0-CH9 4GB vs G Skill Intl F4-2933C14-16GTZRX 16GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

G Skill Intl F4-2933C14-16GTZRX 16GB

G Skill Intl F4-2933C14-16GTZRX 16GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

G Skill Intl F4-2933C14-16GTZRX 16GB

需要考虑的原因
G Skill Intl F4-2933C14-16GTZRX 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 49

左右 -44% 更低的延时
更快的读取速度，GB/s

17.2 10

测试中的平均数值
更快的写入速度，GB/s

12.6 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

G Skill Intl F4-2933C14-16GTZRX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 34
读取速度，GB/s

10.0 17.2
写入速度，GB/s

8.2 12.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2116 3040

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK8GX4M2B3000C15 4GB

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Kingston KHX1866C9D3/8GX 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

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SK Hynix HMA81GS6JJR8N-VK 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CM4B8G1L2666A18S4 8GB

Corsair CM4B8G1L2666A18S4 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Corsair CMK32GX4M4C3000C15 8GB

Corsair CMK32GX4M4C3000C15 8GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Ramaxel Technology RMSA3260MD78HAF-2666 8GB

Ramaxel Technology RMSA3260MD78HAF-2666 8GB

Samsung M393B5270CH0-CH9 4GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB