Samsung M393B5170FH0-CH9 4GB vs INTENSO M418039 8GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

INTENSO M418039 8GB

INTENSO M418039 8GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

更快的写入速度，GB/s

8.2 7.4

测试中的平均数值

INTENSO M418039 8GB

需要考虑的原因
INTENSO M418039 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 49

左右 -145% 更低的延时
更快的读取速度，GB/s

16 10

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

INTENSO M418039 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 20
读取速度，GB/s

10.0 16.0
写入速度，GB/s

8.2 7.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2116 2414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2400C15-8GRK 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Corsair CMK32GX4M2C3333C16 16GB

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Crucial Technology CT4G4DFS824A.C8FF 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 99U5595-005.A00LF 2GB

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SK Hynix HMA81GS6CJR8N-UH 8GB

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Mushkin 991988 (996988) 4GB

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A-DATA Technology DDR4 3000 2OZ 8GB