Samsung M393B5170FH0-CH9 4GB vs Micron Technology 36ASF2G72PZ-2G1B1 16GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

49 51

左右 4% 更低的延时
更快的读取速度，GB/s

10 9.9

测试中的平均数值
更快的写入速度，GB/s

8.2 8.1

测试中的平均数值

Micron Technology 36ASF2G72PZ-2G1B1 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1B1 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 51
读取速度，GB/s

10.0 9.9
写入速度，GB/s

8.2 8.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2116 2314

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLM16G40C18U4B.M8FB1 16GB

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Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

DSL Memory D4SS1G082SH21A-B 16GB

DSL Memory D4SS1G082SH21A-B 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-3200C14-32GTZR 32GB

G Skill Intl F4-3200C14-32GTZR 32GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-4000C18-32GTZR 32GB

G Skill Intl F4-4000C18-32GTZR 32GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-2800C15-8GVRB 8GB

G Skill Intl F4-2800C15-8GVRB 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Apacer Technology 78.C1GMW.AZC0B 8GB

Apacer Technology 78.C1GMW.AZC0B 8GB