Samsung M393B5170FH0-CH9 4GB vs Samsung M471A1K43BB0-CPB 8GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Samsung M471A1K43BB0-CPB 8GB

需要考虑的原因
Samsung M471A1K43BB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 49

左右 -29% 更低的延时
更快的读取速度，GB/s

13.4 10

测试中的平均数值
更快的写入速度，GB/s

9.3 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Samsung M471A1K43BB0-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 38
读取速度，GB/s

10.0 13.4
写入速度，GB/s

8.2 9.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2116 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Kllisre 0000 8GB

Kllisre 0000 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

G Skill Intl F4-2400C14-16GRK 16GB

G Skill Intl F4-2400C14-16GRK 16GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Team Group Inc. Team-Elite-2133 4GB

Team Group Inc. Team-Elite-2133 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Team Group Inc. TEAMGROUP-UD4-2133 8GB

Team Group Inc. TEAMGROUP-UD4-2133 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston ACR26D4S9S8KA-8 8GB

Kingston ACR26D4S9S8KA-8 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Panram International Corporation W4U2666PS-8GC19 8GB

Panram International Corporation W4U2666PS-8GC19 8GB