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Samsung M393B5170FH0-CK0 4GB
Avant Technology W6451U66J9266ND 4GB

Samsung M393B5170FH0-CK0 4GB vs Avant Technology W6451U66J9266ND 4GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Avant Technology W6451U66J9266ND 4GB

Avant Technology W6451U66J9266ND 4GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 72
    左右 63% 更低的延时
Avant Technology W6451U66J9266ND 4GB 需要考虑的原因
Avant Technology W6451U66J9266ND 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Avant Technology W6451U66J9266ND 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 72
  • 读取速度，GB/s
    11.8 left arrow 16.6
  • 写入速度，GB/s
    7.3 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 1731

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Avant Technology W6451U66J9266ND 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Avant Technology W6451U66J9266ND 4GB
Avant Technology W6451U66J9266ND 4GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Apacer Technology 78.BAGNF.40C0B 4GB
Apacer Technology 78.BAGNF.40C0B 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMW16GX4M2C3466C16 8GB
Corsair CMW16GX4M2C3466C16 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
Crucial Technology CT8G4DFS8266.K8FB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
内存RAM