Samsung M393B5170FH0-CK0 4GB vs Corsair CMK32GX4M1A2400C16 32GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Corsair CMK32GX4M1A2400C16 32GB

需要考虑的原因
Corsair CMK32GX4M1A2400C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

15.8 11.8

测试中的平均数值
更快的写入速度，GB/s

7.9 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CMK32GX4M1A2400C16 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

11.8 15.8
写入速度，GB/s

7.3 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 2684

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston K821PJ-MID 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Kingston KHX3466C19D4/16G 16GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Corsair CMR16GX4M2C3466C16 8GB

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Corsair CMX8GX3M2A1600C11 4GB

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Kingston KHX1600C10D3/4G 4GB

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Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Micron Technology 16KTF51264HZ-1G6M1 4GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB