Samsung M393B5170FH0-CK0 4GB vs Corsair CMR32GX4M4C3000C16 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CMR32GX4M4C3000C16 8GB

Corsair CMR32GX4M4C3000C16 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Corsair CMR32GX4M4C3000C16 8GB

需要考虑的原因
Corsair CMR32GX4M4C3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

19 11.8

测试中的平均数值
更快的写入速度，GB/s

15.5 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CMR32GX4M4C3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

11.8 19.0
写入速度，GB/s

7.3 15.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PNY Electronics PNY 2GB

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Apacer Technology D12.2324CS.001 8GB

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Kingston KVT8FP-HYC 4GB

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Micron Technology 8ATF1G64HZ-3G2R1 8GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Samsung M3 78T2863QZS-CF7 1GB

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Samsung M378A4G43AB2-CVF 32GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Kingston 9905702-136.A00G 8GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston KP6FH5-MIE 32GB

Kingston KP6FH5-MIE 32GB