Samsung M393B5170FH0-CK0 4GB vs Corsair CMR64GX4M8C3000C15 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CMR64GX4M8C3000C15 8GB

Corsair CMR64GX4M8C3000C15 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 98

左右 72% 更低的延时
更快的读取速度，GB/s

11.8 10.7

测试中的平均数值

Corsair CMR64GX4M8C3000C15 8GB

需要考虑的原因
Corsair CMR64GX4M8C3000C15 8GB

报告一个错误

更快的写入速度，GB/s

9.0 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CMR64GX4M8C3000C15 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 98
读取速度，GB/s

11.8 10.7
写入速度，GB/s

7.3 9.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 1679

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK16GX4M2E3200C16 8GB

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Crucial Technology BL16G36C16U4W.M16FE1 16GB

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Corsair CMD16GX3M2A1866C9 8GB

G Skill Intl F4-3400C16-4GRBD 4GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd GKE160SO102408-2400 16GB

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Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB