Samsung M393B5170FH0-CK0 4GB vs Corsair CMT32GX4M2C3600C18 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Corsair CMT32GX4M2C3600C18 16GB

需要考虑的原因
Corsair CMT32GX4M2C3600C18 16GB

报告一个错误

更快的读取速度，GB/s

17.8 11.8

测试中的平均数值
更快的写入速度，GB/s

16.9 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CMT32GX4M2C3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

11.8 17.8
写入速度，GB/s

7.3 16.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3898

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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SK Hynix HMT351U6CFR8C-H9 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Corsair CMSX4GX3M1A1600C9 4GB

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Avant Technology F6451U64F9333G 4GB

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Corsair CMK8GX4M2B3600C18 4GB

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G Skill Intl F5-6400J3239G16G 16GB

Corsair CMN16GX4M2Z3200C16 8GB

Corsair CMN16GX4M2Z3200C16 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMWX8GD3600C18W4 8GB

Corsair CMWX8GD3600C18W4 8GB