Samsung M393B5170FH0-CK0 4GB vs Corsair CMT64GX4M4C3466C16 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Corsair CMT64GX4M4C3466C16 16GB

Corsair CMT64GX4M4C3466C16 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Corsair CMT64GX4M4C3466C16 16GB

需要考虑的原因
Corsair CMT64GX4M4C3466C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

20.2 11.8

测试中的平均数值
更快的写入速度，GB/s

17.2 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Corsair CMT64GX4M4C3466C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

11.8 20.2
写入速度，GB/s

7.3 17.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 4106

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

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Neo Forza NMUD480E82-3600 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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AMD R748G2400U2S 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston ACR512X64D3S13C9G 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Kingston 9965433-034.A00LF 4GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BLS4G4D26BFSE.8FE 4GB

Crucial Technology BLS4G4D26BFSE.8FE 4GB