Samsung M393B5170FH0-CK0 4GB vs Crucial Technology BLS8G4D240FSC.M16FAD 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSC.M16FAD 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

16.8 11.8

测试中的平均数值
更快的写入速度，GB/s

13.3 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

11.8 16.8
写入速度，GB/s

7.3 13.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2057 3097

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston XCCT36-MIE 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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AMD AE34G1601U1 4GB

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Kingston KMKYF9-MIB 8GB

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Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMK32GX4M4A2666C15 8GB

Corsair CMK32GX4M4A2666C15 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston CBD24D4S7D8MA-16 16GB

Kingston CBD24D4S7D8MA-16 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-2666C18-32GRS 32GB

G Skill Intl F4-2666C18-32GRS 32GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB