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Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB

Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT16G4SFD8213.C16FAD 16GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 41
    左右 34% 更低的延时
Crucial Technology CT16G4SFD8213.C16FAD 16GB 需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FAD 16GB
报告一个错误
  • 更快的读取速度，GB/s
    12.3 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 41
  • 读取速度，GB/s
    11.8 left arrow 12.3
  • 写入速度，GB/s
    7.3 left arrow 9.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2302

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMW32GX4M4C3200C14 8GB
Corsair CMW32GX4M4C3200C14 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
SK Hynix HMA41GU6MFR8N-TF 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Panram International Corporation D4U2666P-8G 8GB
Panram International Corporation D4U2666P-8G 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 99U5663-006.A00G 16GB
Kingston 99U5663-006.A00G 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK8GX4M2B3200C16 4GB
Corsair CMK8GX4M2B3200C16 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905702-137.A00G 8GB
Kingston 9905702-137.A00G 8GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
SK Hynix HMA84GL7AFR4N-UH 32GB
SK Hynix HMA84GL7AFR4N-UH 32GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9965600-005.A01G 16GB
Kingston 9965600-005.A01G 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Kingston CBD26D4U9S8MH-8 8GB
Kingston CBD26D4U9S8MH-8 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston XK2M26-MIE 16GB
Kingston XK2M26-MIE 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C16-8GSXFB 8GB
G Skill Intl F4-3200C16-8GSXFB 8GB
内存RAM