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Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFS8266.C8FE 16GB

Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT16G4SFS8266.C8FE 16GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Crucial Technology CT16G4SFS8266.C8FE 16GB

Crucial Technology CT16G4SFS8266.C8FE 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 37
    左右 27% 更低的延时
Crucial Technology CT16G4SFS8266.C8FE 16GB 需要考虑的原因
Crucial Technology CT16G4SFS8266.C8FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 37
  • 读取速度，GB/s
    11.8 left arrow 15.7
  • 写入速度，GB/s
    7.3 left arrow 12.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2971

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Crucial Technology CT16G4SFS8266.C8FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston KHX2666C16/16G 16GB
Kingston KHX2666C16/16G 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
内存RAM
OCZ OCZ3G2000LV2G 2GB
OCZ OCZ3G2000LV2G 2GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Kingston K6VDX7-HYD 8GB
Kingston K6VDX7-HYD 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3600C14-8GTZNB 8GB
G Skill Intl F4-3600C14-8GTZNB 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Avant Technology W641GU42J9266NC 8GB
Avant Technology W641GU42J9266NC 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston 99U5678-029.A00G 8GB
Kingston 99U5678-029.A00G 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology D22.2221ZA.001 8GB
Apacer Technology D22.2221ZA.001 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C15-16GTZ 16GB
G Skill Intl F4-3200C15-16GTZ 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Essencore Limited KD48GS88A-26N1600 8GB
Essencore Limited KD48GS88A-26N1600 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM