Samsung M393B5170FH0-CK0 4GB vs Crucial Technology CT4G4DFS8266.M8FG 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology CT4G4DFS8266.M8FG 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 71

左右 62% 更低的延时

Crucial Technology CT4G4DFS8266.M8FG 4GB

需要考虑的原因
Crucial Technology CT4G4DFS8266.M8FG 4GB

报告一个错误

更快的读取速度，GB/s

15.4 11.8

测试中的平均数值
更快的写入速度，GB/s

8.0 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 71
读取速度，GB/s

11.8 15.4
写入速度，GB/s

7.3 8.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 1586

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston HP698651-154-MCN 8GB

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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Kingston KVR533D2N4 512MB

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Apacer Technology 78.CAGP7.AZ20B 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Gloway International (HK) STKD4XMP2400-F 4GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Neo Forza NMUD480E82-3600 8GB

Neo Forza NMUD480E82-3600 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

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