Samsung M393B5170FH0-CK0 4GB vs Essencore Limited KD48GS88C-32N2200 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Essencore Limited KD48GS88C-32N2200 8GB

Essencore Limited KD48GS88C-32N2200 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Essencore Limited KD48GS88C-32N2200 8GB

需要考虑的原因
Essencore Limited KD48GS88C-32N2200 8GB

报告一个错误

更快的读取速度，GB/s

17.7 11.8

测试中的平均数值
更快的写入速度，GB/s

14.7 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Essencore Limited KD48GS88C-32N2200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

11.8 17.7
写入速度，GB/s

7.3 14.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2057 3297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL16-20-20 D4-3200

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

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TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK8GX4M2B3000C15 4GB

Corsair CMK8GX4M2B3000C15 4GB