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Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2400C15Z8GNT 8GB

Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-2400C15Z8GNT 8GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 69
    左右 61% 更低的延时
  • 更快的写入速度，GB/s
    7.3 left arrow 6.5
    测试中的平均数值
G Skill Intl F4-2400C15Z8GNT 8GB 需要考虑的原因
G Skill Intl F4-2400C15Z8GNT 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.6 left arrow 11.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 69
  • 读取速度，GB/s
    11.8 left arrow 13.6
  • 写入速度，GB/s
    7.3 left arrow 6.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 1598

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

G Skill Intl F4-2400C15Z8GNT 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 76.D305G.D390B 16GB
Apacer Technology 76.D305G.D390B 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 3000 8GB
A-DATA Technology DDR4 3000 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Kingston 99U5678-029.A00G 8GB
Kingston 99U5678-029.A00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2D3600C16 8GB
Corsair CMK16GX4M2D3600C16 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4B8G2J3000K15K 8GB
Corsair CM4B8G2J3000K15K 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMR16GX4M2D3000C16 8GB
Corsair CMR16GX4M2D3000C16 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Crucial Technology C 8GB
Crucial Technology C 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-3200C16-8GTZKW 8GB
G Skill Intl F4-3200C16-8GTZKW 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMK32GX4M2L3000C15 16GB
Corsair CMK32GX4M2L3000C15 16GB
内存RAM