Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3200C16-4GVRB 4GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

G Skill Intl F4-3200C16-4GVRB 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

G Skill Intl F4-3200C16-4GVRB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GVRB 4GB

报告一个错误

更快的读取速度，GB/s

18.5 11.8

测试中的平均数值
更快的写入速度，GB/s

13.7 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

11.8 18.5
写入速度，GB/s

7.3 13.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905701-006.A00G 16GB

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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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Kingston 9905471-001.A01LF 2GB

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AMD R5316G1609U2K 8GB

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Crucial Technology CT16G4S24AM.M16FE 16GB

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Apacer Technology 78.DAGRL.4050C 16GB

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Corsair CMR64GX4M4C3466C16 16GB

Corsair CMR64GX4M4C3466C16 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

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SK Hynix HMA451U6MFR8N-TF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C

EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB