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Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3333C16-8GTZB 8GB

Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3333C16-8GTZB 8GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
G Skill Intl F4-3333C16-8GTZB 8GB 需要考虑的原因
G Skill Intl F4-3333C16-8GTZB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 27
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3333C16-8GTZB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 21
  • 读取速度，GB/s
    11.8 left arrow 18.7
  • 写入速度，GB/s
    7.3 left arrow 14.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3380

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

G Skill Intl F4-3333C16-8GTZB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT102464BD160B.M16 8GB
Crucial Technology CT102464BD160B.M16 8GB
Kingston 99P5723-006.A00G 8GB
Kingston 99P5723-006.A00G 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Apacer Technology GD2.2229BH.001 16GB
Apacer Technology GD2.2229BH.001 16GB
内存RAM
OCZ OCZ2SI8002G 2GB
OCZ OCZ2SI8002G 2GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK32GX4M4A2666C15 8GB
Corsair CMK32GX4M4A2666C15 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Avant Technology J642GU42J5213N2 16GB
Avant Technology J642GU42J5213N2 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CM4B8G2J2400A14K 8GB
Corsair CM4B8G2J2400A14K 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-2666C19-8GVK 8GB
G Skill Intl F4-2666C19-8GVK 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
内存RAM