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Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3466C16-8GTZKW 8GB

Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3466C16-8GTZKW 8GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
G Skill Intl F4-3466C16-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GTZKW 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3466C16-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    11.8 left arrow 17.5
  • 写入速度，GB/s
    7.3 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3104

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

G Skill Intl F4-3466C16-8GTZKW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Qimonda 72T128420EFA3SB2 1GB
Corsair CMK64GX4M4D3000C16 16GB
Corsair CMK64GX4M4D3000C16 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Asgard VMA44UI-MEC1U2AW2 32GB
Asgard VMA44UI-MEC1U2AW2 32GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
SK Hynix HMA84GR7AFR4N-VK 32GB
SK Hynix HMA84GR7AFR4N-VK 32GB
内存RAM
Apacer Technology 75.A73AA.G03 2GB
Apacer Technology 75.A73AA.G03 2GB
G Skill Intl F4-3200C16-8GVR 8GB
G Skill Intl F4-3200C16-8GVR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-16GTZSW 16GB
G Skill Intl F4-3200C14-16GTZSW 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston KHX4133C19D4/8GX 8GB
Kingston KHX4133C19D4/8GX 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-4000C18-32GVK 32GB
G Skill Intl F4-4000C18-32GVK 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2B3200C16 8GB
Corsair CMK16GX4M2B3200C16 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
OCMEMORY OCM3200CL16D-16GBN 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
内存RAM