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Samsung M393B5170FH0-CK0 4GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

Samsung M393B5170FH0-CK0 4GB vs Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB 需要考虑的原因
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    11.8 left arrow 16.7
  • 写入速度，GB/s
    7.3 left arrow 13.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3254

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB RAM的比较

Crucial Technology BL16G32C16U4B.16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Ramaxel Technology RMN1740HC48D8F667A 2GB
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内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
Samsung M393B5170FH0-CK0 4GB
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Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
内存RAM
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内存RAM
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内存RAM
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Kingston 9905403-437.A01LF 4GB
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Crucial Technology BLS8G4D240FSA.M16FAD 8GB
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SK Hynix HYMP164U64CP6-Y5 512MB
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内存RAM
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内存RAM
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Samsung M471B5273CH0-CH9 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
内存RAM
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Corsair CML8GX3M2A1866C9 4GB
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内存RAM
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内存RAM
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Kingston KHX2133C11D3/4GX 4GB
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G Skill Intl F4-3000C15-8GVS 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
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