Samsung M393B5170FH0-CK0 4GB vs Kingston 9905734-082.A00G 16GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Kingston 9905734-082.A00G 16GB

Kingston 9905734-082.A00G 16GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Kingston 9905734-082.A00G 16GB

需要考虑的原因
Kingston 9905734-082.A00G 16GB

报告一个错误

更快的读取速度，GB/s

18.1 11.8

测试中的平均数值
更快的写入速度，GB/s

15.6 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Kingston 9905734-082.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

11.8 18.1
写入速度，GB/s

7.3 15.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2057 3600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMR32GX4M2C3333C16 16GB

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Crucial Technology BL8G30C15U4WL.M8FE1 8GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

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Crucial Technology BLS16G4S240FSD.16FBD 16GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMK16GX4M2B3733C17 8GB

Corsair CMK16GX4M2B3733C17 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB