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Samsung M393B5170FH0-CK0 4GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB

Samsung M393B5170FH0-CK0 4GB vs Micron Technology 16ATF2G64HZ-2G1A1 16GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 25% 更低的延时
Micron Technology 16ATF2G64HZ-2G1A1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1A1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.7 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 36
  • 读取速度，GB/s
    11.8 left arrow 13.7
  • 写入速度，GB/s
    7.3 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 2504

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905744-076.A00G 16GB
Kingston 9905744-076.A00G 16GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kllisre M378A1K43BB2-CRC 8GB
Kllisre M378A1K43BB2-CRC 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
SK Hynix HMA82GS6MFR8N-TF 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston KDK8NX-MIE 16GB
Kingston KDK8NX-MIE 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung M471A1K1KBB0-CPB 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
EVGA 16G-D4-2666-MR 4GB
EVGA 16G-D4-2666-MR 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Golden Empire CL15-15-15 D4-2666 4GB
Golden Empire CL15-15-15 D4-2666 4GB
内存RAM