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Samsung M393B5170FH0-CK0 4GB
SK Hynix HMA82GU6CJR8N-XN 16GB

Samsung M393B5170FH0-CK0 4GB vs SK Hynix HMA82GU6CJR8N-XN 16GB

总分
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 13% 更低的延时
SK Hynix HMA82GU6CJR8N-XN 16GB 需要考虑的原因
SK Hynix HMA82GU6CJR8N-XN 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.2 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
SK Hynix HMA82GU6CJR8N-XN 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 31
  • 读取速度，GB/s
    11.8 left arrow 17.2
  • 写入速度，GB/s
    7.3 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3256

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

SK Hynix HMA82GU6CJR8N-XN 16GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B5170FH0-CK0 4GB
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SK Hynix HMA82GU6CJR8N-XN 16GB
SK Hynix HMA82GU6CJR8N-XN 16GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM