Samsung M393B5270CH0-CH9 4GB vs Crucial Technology CT16G4DFD832A.M16FR 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Crucial Technology CT16G4DFD832A.M16FR 16GB

Crucial Technology CT16G4DFD832A.M16FR 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Crucial Technology CT16G4DFD832A.M16FR 16GB

需要考虑的原因
Crucial Technology CT16G4DFD832A.M16FR 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 42

左右 -27% 更低的延时
更快的读取速度，GB/s

18.7 10.6

测试中的平均数值
更快的写入速度，GB/s

12.2 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT16G4DFD832A.M16FR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 33
读取速度，GB/s

10.6 18.7
写入速度，GB/s

9.0 12.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2423 3153

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BLS16G4D240FSC.16FBD 16GB

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Samsung M393B5170FH0-CH9 4GB

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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A-DATA Technology ADOVE1A0834E 1GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB