Samsung M393B5270CH0-CH9 4GB vs G Skill Intl F4-3200C15-16GTZSK 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

G Skill Intl F4-3200C15-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZSK 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 42

左右 -83% 更低的延时
更快的读取速度，GB/s

19.3 10.6

测试中的平均数值
更快的写入速度，GB/s

15.8 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3200C15-16GTZSK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 23
读取速度，GB/s

10.6 19.3
写入速度，GB/s

9.0 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 3964

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Kingston 9905701-029.A00G 16GB

Kingston 9905701-029.A00G 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

Crucial Technology CT4G4DFS8266.M8FF 4GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Kingston 9905701-131.A00G 16GB

Kingston 9905701-131.A00G 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMD16GX4M4B3200C14 4GB

Corsair CMD16GX4M4B3200C14 4GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

A-DATA Technology DDR4 3000 8GB

A-DATA Technology DDR4 3000 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9905625-139.A00G 16GB

Kingston 9905625-139.A00G 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Corsair CMK16GX4M2L3200C16 8GB

Corsair CMK16GX4M2L3200C16 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2666C18-4GFX 4GB

G Skill Intl F4-2666C18-4GFX 4GB