RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3600C16-8GTZ 8GB

Samsung M393B5270CH0-CH9 4GB vs G Skill Intl F4-3600C16-8GTZ 8GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
G Skill Intl F4-3600C16-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3600C16-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 42
    左右 -83% 更低的延时
  • 更快的读取速度，GB/s
    20.4 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.5 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 23
  • 读取速度，GB/s
    10.6 left arrow 20.4
  • 写入速度，GB/s
    9.0 left arrow 16.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3810

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

G Skill Intl F4-3600C16-8GTZ 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KHX2666C15/8G 8GB
Kingston KHX2666C15/8G 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Apacer Technology 78.CAGN4.4020B 8GB
Apacer Technology 78.CAGN4.4020B 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMK32GX4M2B3333C16 16GB
Corsair CMK32GX4M2B3333C16 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Samsung M378A4G43AB2-CWE 32GB
Samsung M378A4G43AB2-CWE 32GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Panram International Corporation W4U2400PS-4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
内存RAM