PNY Electronics PNY 2GB vs Kingston KF3600C18D4/32GX 32GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Kingston KF3600C18D4/32GX 32GB

需要考虑的原因
Kingston KF3600C18D4/32GX 32GB

报告一个错误

更快的读取速度，GB/s

18.9 13.8

测试中的平均数值
更快的写入速度，GB/s

14.8 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston KF3600C18D4/32GX 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.8 18.9
写入速度，GB/s

8.4 14.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 3687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Crucial Technology CT8G4DFS824A.M8FD 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston KF3600C18D4/32GX 32GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Nanya Technology M2F4GH64CB8HB6N-CG 4GB

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Apacer Technology 78.CAGNT.4050B 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

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Kingston ACR512X64D3S13C9G 4GB

Team Group Inc. Team-Elite-2133 4GB

Team Group Inc. Team-Elite-2133 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 9ASF51272PZ-2G1AX 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB