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Samsung M393B1G70BH0-CK0 8GB
Kingston 9905678-028.A00G 8GB

Samsung M393B1G70BH0-CK0 8GB vs Kingston 9905678-028.A00G 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
Kingston 9905678-028.A00G 8GB

Kingston 9905678-028.A00G 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
Kingston 9905678-028.A00G 8GB 需要考虑的原因
Kingston 9905678-028.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 51
    左右 -113% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905678-028.A00G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 24
  • 读取速度，GB/s
    9.8 left arrow 15.9
  • 写入速度，GB/s
    8.1 left arrow 10.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2725

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Kingston 9905678-028.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMH32GX4M2E3200C16 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
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Avant Technology J641GU42J9266ND 8GB
Avant Technology J641GU42J9266ND 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
V-Color Technology Inc. TD416G26D819-VC 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 9905678-028.A00G 8GB
Kingston 9905678-028.A00G 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3300C16-8GTZKW 8GB
G Skill Intl F4-3300C16-8GTZKW 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C14-4GRK 4GB
G Skill Intl F4-2400C14-4GRK 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
Crucial Technology BL8G32C16U4W.M8FE 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMT64GX4M2C3600C18 32GB
Corsair CMT64GX4M2C3600C18 32GB
内存RAM