Samsung M393B5270CH0-CH9 4GB vs Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 42

左右 -27% 更低的延时
更快的读取速度，GB/s

20.1 10.6

测试中的平均数值
更快的写入速度，GB/s

13.7 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 33
读取速度，GB/s

10.6 20.1
写入速度，GB/s

9.0 13.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2423 3260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL16-18-18 D4-3000 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Samsung M393B5270CH0-CH9 4GB

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A-DATA Technology DQVE1908 512MB

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Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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AMD R534G1601U1S 4GB

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Samsung M393B5170GB0-CK0 4GB