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Samsung M393B5270CH0-CH9 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Samsung M393B5270CH0-CH9 4GB vs OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB 需要考虑的原因
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 42
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 39
  • 读取速度，GB/s
    10.6 left arrow 15.1
  • 写入速度，GB/s
    9.0 left arrow 12.6
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3000

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMD32GX4M2C3200C14T 16GB
Corsair CMD32GX4M2C3200C14T 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M378A1G43EB1-CRC 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SK Hynix HMA82GS6AFRFR-UH 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
内存RAM
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M378A1K43CB2-CTD 8GB
内存RAM
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
G Skill Intl F4-3200C15-8GTZKY 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Crucial Technology BL8G32C16S4B.8FE 8GB
内存RAM
A-DATA Technology AM1U16BC4P2-B19H 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Samsung M471A5244CB0-CRC 4GB
Samsung M471A5244CB0-CRC 4GB
内存RAM
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
SK Hynix GKE160SO102408-2400 16GB
SK Hynix GKE160SO102408-2400 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Kingston 9905701-018.A00G 16GB
Kingston 9905701-018.A00G 16GB
内存RAM