Samsung M393B5270CH0-CH9 4GB vs Shenzhen Technology Co Ltd 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Shenzhen Technology Co Ltd 8GB

Shenzhen Technology Co Ltd 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Shenzhen Technology Co Ltd 8GB

需要考虑的原因
Shenzhen Technology Co Ltd 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 42

左右 -31% 更低的延时
更快的读取速度，GB/s

15.9 10.6

测试中的平均数值
更快的写入速度，GB/s

11.9 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Shenzhen Technology Co Ltd 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 32
读取速度，GB/s

10.6 15.9
写入速度，GB/s

9.0 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2423 2831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43CB1-CTCT 16GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Apacer Technology GD2.1527WC.001 8GB

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Corsair CMK32GX4M2A2400C14 16GB

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G Skill Intl F4-3000C16-8GISB 8GB

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Kingston 9905403-156.A00LF 2GB

Corsair CMK32GX4M2F4000C19 16GB

Corsair CMK32GX4M2F4000C19 16GB