Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3200C16-8GTZ 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F4-3200C16-8GTZ 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

G Skill Intl F4-3200C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

19.8 11.8

测试中的平均数值
更快的写入速度，GB/s

15.8 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3200C16-8GTZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

11.8 19.8
写入速度，GB/s

7.3 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2057 3635

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G

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Samsung M395T2863QZ4-CF76 1GB

Mushkin MR[ABC]4U320GJJM8G 8GB

Mushkin MR[ABC]4U320GJJM8G 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Apacer Technology GD2.1527WC.001 8GB

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Corsair CMU32GX4M2A2400C14 16GB

G Skill Intl F3-1600C9-8GAR 8GB

G Skill Intl F3-1600C9-8GAR 8GB

G Skill Intl F3-1600C9-8GXM 8GB

G Skill Intl F3-1600C9-8GXM 8GB