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Samsung M393B5270CH0-CH9 4GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB

Samsung M393B5270CH0-CH9 4GB vs SK Hynix V-GeN D4H8GL26A8TX5 8GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
SK Hynix V-GeN D4H8GL26A8TX5 8GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
SK Hynix V-GeN D4H8GL26A8TX5 8GB 需要考虑的原因
SK Hynix V-GeN D4H8GL26A8TX5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 42
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 21
  • 读取速度，GB/s
    10.6 left arrow 17.7
  • 写入速度，GB/s
    9.0 left arrow 13.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3042

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMA425S6AFR6N-UH 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Corsair CMK32GX4M2A2400C16 16GB
Corsair CMK32GX4M2A2400C16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston HP37D4U1S8ME-16X 16GB
Kingston HP37D4U1S8ME-16X 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB
Apacer Technology 78.C1GS7.AUC0B 8GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
A-DATA Technology DDR4 3000 8GB
A-DATA Technology DDR4 3000 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Panram International Corporation PUD42133C154G2VS 4GB
Panram International Corporation PUD42133C154G2VS 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905702-400.A00G 8GB
Kingston 9905702-400.A00G 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-2400C15-8GFX 8GB
G Skill Intl F4-2400C15-8GFX 8GB
内存RAM