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Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Samsung M393B5270CH0-CH9 4GB vs Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 42
    左右 -56% 更低的延时
  • 更快的读取速度，GB/s
    20.6 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.4 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 27
  • 读取速度，GB/s
    10.6 left arrow 20.6
  • 写入速度，GB/s
    9.0 left arrow 18.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3826

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9905403-444.A00LF 4GB
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Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-5333C22-8GTRG 8GB
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内存RAM
Samsung M378A1G43DB0-CPB 8GB
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Kingston KVR533D2N4 512MB
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内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3200C16-4GVK 4GB
G Skill Intl F4-3200C16-4GVK 4GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
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Crucial Technology BLT4G4D30AETA.K8FE 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Kingston KVR26N19D8/16 16GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Neo Forza NMUD416E82-3600 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
内存RAM