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PNY Electronics PNY 2GB
Kingston KVR26N19D8/16 16GB

PNY Electronics PNY 2GB vs Kingston KVR26N19D8/16 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 54
    左右 50% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 7.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.7
    测试中的平均数值
Kingston KVR26N19D8/16 16GB 需要考虑的原因
Kingston KVR26N19D8/16 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Kingston KVR26N19D8/16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 54
  • 读取速度，GB/s
    13.8 left arrow 7.6
  • 写入速度，GB/s
    8.4 left arrow 7.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 1611

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Kingston KVR26N19D8/16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information JM3200HLE-16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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Crucial Technology CT102464BF160B.16F 8GB
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Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
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A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
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内存RAM
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内存RAM
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Team Group Inc. Vulcan-1600 4GB
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Crucial Technology BLS8G4D30BESBK.8FD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J641GU42J9266NL 8GB
Avant Technology J641GU42J9266NL 8GB
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