Samsung M395T2863QZ4-CF76 1GB vs Asgard VMA41UF-MEC1U2BQ2 4GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Asgard VMA41UF-MEC1U2BQ2 4GB

Asgard VMA41UF-MEC1U2BQ2 4GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 12.0

测试中的平均数值

Asgard VMA41UF-MEC1U2BQ2 4GB

需要考虑的原因
Asgard VMA41UF-MEC1U2BQ2 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 104

左右 -259% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Asgard VMA41UF-MEC1U2BQ2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 29
读取速度，GB/s

3,192.0 15.7
写入速度，GB/s

2,404.5 12.0
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2553

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology HMA81GU6AFR8N-UH 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Team Group Inc. Team-Elite-1333 4GB

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King Tiger Technology TMKG8G3000C17(XMP) 8GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB