Samsung M395T2863QZ4-CF76 1GB vs Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 104

左右 -285% 更低的延时
更快的写入速度，GB/s

9.2 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 27
读取速度，GB/s

3,192.0 14.4
写入速度，GB/s

2,404.5 9.2
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2575

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMK32GX4M2Z4000C18 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905403-134.A00LF 2GB

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Kingston 9965745-002.A00G 16GB

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Kingston 9905458-017.A01LF 4GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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SK Hynix HMA42GR7MFR4N-TF 16GB

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SK Hynix HMA42GR7AFR4N-UH 16GB

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G Skill Intl F4-3200C22-16GRS 16GB

Avant Technology F641GU67F9333G 8GB

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Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB