Samsung M395T2863QZ4-CF76 1GB vs Corsair CMD32GX4M4A2666C15 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Corsair CMD32GX4M4A2666C15 8GB

Corsair CMD32GX4M4A2666C15 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15.8

测试中的平均数值
更快的写入速度，GB/s

2,404.5 12.4

测试中的平均数值

Corsair CMD32GX4M4A2666C15 8GB

需要考虑的原因
Corsair CMD32GX4M4A2666C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 104

左右 -197% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Corsair CMD32GX4M4A2666C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 35
读取速度，GB/s

3,192.0 15.8
写入速度，GB/s

2,404.5 12.4
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 3164

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M3 78T6553CZ3-CE6 512MB

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Corsair CMK32GX4M2D3200C16 16GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Corsair CMSX4GX3M1A1600C9 4GB

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Samsung M471A2K43BB1-CPB 16GB

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Kingston KHX1866C10D3/4G 4GB

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Corsair CMH32GX4M2D3600C18 16GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Corsair CML8GX3M2A1866C9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB